Silicon oxide (SiO_x) and germanium oxide (GeO_x) nanoparticles are promising candidates for energy storage applications. We synthesized SiO_x and GeO_x nanostructures by employing photonic curing; a low-cost roll-to-roll instantaneous process. This work is a step to optimize photonic curing for semiconductor oxide nanostructures synthesis on a large scale with nanometric control for next generation energy applications.

Abstract

Silicon and Germanium oxide (SiO_x and GeO_x) nanostructures are promising materials for energy storage applications due to their potentially high energy density, large lithiation capacity (~10X carbon), low toxicity, low cost, and high thermal stability. This work reports a unique approach to achieving controlled synthesis of SiO_x and GeO_x nanostructures via photonic curing. Unlike conventional methods like rapid thermal annealing, quenching during pulsed photonic curing occurs rapidly (sub-millisecond), allowing the trapping of metastable states to form unique phases and nanostructures. We explored the possible underlying mechanism of photonic curing by incorporating laws of photophysics, photochemistry, and simulated temperature profile of thin film. The results show that photonic curing of spray coated 0.1 M molarity Si and Ge Acetyl Acetate precursor solution, at total fluence 80 J cm⁻² can yield GeO_x and SiO_x nanostructures. The as-synthesized nanostructures are ester functionalized due to photoinitiated chemical reactions in thin film during photonic curing. Results also showed that nanoparticle size changes from ~48 nm to ~11 nm if overall fluence is increased by increasing the number of pulses. These results are an important contribution towards large-scale synthesis of the Ge and Si oxide nanostructured materials which is necessary for next-generation energy storage devices.